Dielectric relaxation spectrum of TlSe thin films

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Yakut Ş.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.22, no.1-2, pp.89-92, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 22 Issue: 1-2
  • Publication Date: 2020
  • Journal Name: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.89-92
  • Keywords: Relaxation time, TlSe, thin-film, Dielectric properties, AC CONDUCTIVITY, AG, MODULUS, SE
  • Istanbul University Affiliated: Yes

Abstract

The dielectric properties of TlSe thin films with thickness of 2000 A, obtained via thermal evaporation of TlSe crystals, have been measured using ohmic Al electrodes in the frequency range 0.2-100 kHz and within the temperature interval 293353 K. The dielectric constant and the dielectric loss of are found to decrease with increasing frequency and increase with increasing temperature. This behavior is explained two possible polarization mechanisms in the films. From the dielectric constant and the dielectric loss expressions, the distribution of relaxation times was derived. There are two possible relaxation regions in the investigated frequency range.