Charge-state transitions of muonium in 6H silicon carbide

Bani-Salameh, H.; Meyer, A.; Carroll, B.; Lichti, R.; Celebi, Yaşar; Chow, K.; King, P.; Cox, S.

doi:10.1016/j.physb.2007.09.039

Charge-state transitions of muonium in 6H silicon carbide

Bani-Salameh H. N., Meyer A. G., Carroll B. R., Lichti R. L., Celebi Y. G., Chow K. H., ...More

PHYSICA B-CONDENSED MATTER, vol.401, pp.631-634, 2007 (SCI-Expanded)

Publication Type: Article / Article
Volume: 401
Publication Date: 2007
Doi Number: 10.1016/j.physb.2007.09.039
Journal Name: PHYSICA B-CONDENSED MATTER
Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Page Numbers: pp.631-634
Istanbul University Affiliated: Yes

Abstract

The muonium analog of hydrogen as an isolated impurity was investigated to above 1000 K in n-type, p-type, and high-resistivity 6H-SiC. Temperature-dependent muon spin precession amplitudes from the combined Mu(+) and Mu(-) states reveal a series of charge-state transitions. The low-temperature transitions in doped samples are assigned to carrier capture processes. Ionization energies in high-resistivity 6H-SiC locate the Mu donor and acceptor levels at E-C -280 and E-v + 860 meV, respectively. The present results place the Mu(+/-) pinning energy in 6H-SiC in excellent agreement with that obtained for other group-IV materials. (c) 2007 Elsevier B.V. All rights reserved.