Effect on the Electrical Characterizations of Temperature and Frequency Depending on Series Resistance and Interface States in MS Structure


Kinaci B.

JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, vol.20, no.2, pp.313-318, 2017 (Journal Indexed in ESCI) identifier

  • Publication Type: Article / Article
  • Volume: 20 Issue: 2
  • Publication Date: 2017
  • Doi Number: 10.2339/2017.20.2.313-318
  • Title of Journal : JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI
  • Page Numbers: pp.313-318

Abstract

In order to explain the experimental effect of series resistance and interface states of device on current-voltage, capacitance-voltage and conductance-voltage characteritics of Ni/Au/n-Si structure have beeen investigated. Current-voltage characteritics of structure have beeen measuremed in the temperature range of 100K-380K by steps of 40K. In addition, capacitance-voltage and conductance-voltage characteristics of structure have beeen measuremed in the frequency range of 100kHz-1MHz at room temperature. The obtained results show that the Ni/Au/n-Si structure is a good candidate for the electronic device applications.