III-V concentrator solar cells are suitable materials in order to reduce the cost of photovoltaic electricity. By using Fresnel lens in concentrating photovoltaic technology is an effective way to entirely use the sunlight. In the present study, the research on the efficiency analysis of the GaInP/GaAs concentrated solar cell stnicture with AlGaAs tunnel junction was performed. The electrical output parameters of this structure were determined by concentrated system with Fresnel lens. The current-voltage measurements of concentrated solar cell were carried out at room temperature under both dark and air mass 1.5 global radiations. The parameters of GaInP/GaAs concentrated solar cell at 1 Sun and at 32 Suns are compared. It is obtained that the integration of the concentrated system on the solar cell structure improves the device performance by approximate to 7.5%.