The conductivity properties of TlBi(Se1-xSx)(2) crystals


Ballikaya S., yildirim S.

6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.585 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.585

Abstract

In the past forty years we witnessed a tremendous progress in technology. Use of semiconductors in electronic industry has played an extremely important role in this. The remarkable physical properties like high conductivity, thermo-electric power and photosensitivity of layered single crystals, such as TlBiX2 (X = Se, S), have made possible their use in photocells, thermo-electric instruments, opto-acoustic detectors and circuit elements. In this work, we are trying to understand the conductivity properties of TlBi(Se1-x,S-x)(2) layered single crystals, for x = 0.0, 0.25, 0.50, 0.75 and 1.0, by studying their resistivity in the direction perpendicular to the crystal axis and thermo-electric properties in the 293-413 K temperature region. We thank to M. Ozer who provided us these crystals which were grown by Bridgman-Stockbarger method [1].