Temperature dependence of the threshold electric field in a hot electron VCSEL


Serpenguzel A., Balkan N., Erol A. , Arikan M., Roberts J.

Conference on Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, San-Jose, Costa Rica, 24 - 27 January 2005, vol.5725, pp.194-201 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 5725
  • Doi Number: 10.1117/12.591107
  • City: San-Jose
  • Country: Costa Rica
  • Page Numbers: pp.194-201

Abstract

The operation of the Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure - Vertical Cavity Surface Emitting Laser (HELLISH-VCSEL) devices is based on hot carrier transport parallel to the layers of Ga1-xAlxAs p-n junction. It is therefore a field - effect device and the light emission from the device is independent of the polarity of the applied voltage. In this study, we present the temperature dependence of the operational characteristics of the device. Experimental studies comprising of the measurements of the IN characteristics, electroluminescence, reflectivity, and temperature dependent light-applied electric field (L-F) characteristics are conducted to find the optimum operating temperature of the device.