A simple approach for modeling the influence of hot-carrier effect on threshold voltage of MOS transistors


Kacar F. , Kuntman A. , Kuntman H.

13th International Conference on Microelectronics (ICM 2001), Rabat, Malta, 29 - 31 October 2001, pp.43-46 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • Doi Number: 10.1109/icm.2001.997482
  • City: Rabat
  • Country: Malta
  • Page Numbers: pp.43-46

Abstract

Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability concept in modern microcircuits. In this paper, a new simple expression based on polynomial aproximation is proposed for modeling the influence of hot-carrier effect on the MOSFET threshold voltage. The method is especially useful to determine the degradation of the MOS transistors in analogue building blocks and to predict the operation reliability therefore it provides ne possibilities in the analogue IC design.