A simple approach for modeling the influence of hot-carrier effect on threshold voltage of MOS transistors

Kacar F., Kuntman A., Kuntman H.

13th International Conference on Microelectronics (ICM 2001), Rabat, Malta, 29 - 31 Ekim 2001, ss.43-46 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Doi Numarası: 10.1109/icm.2001.997482
  • Basıldığı Şehir: Rabat
  • Basıldığı Ülke: Malta
  • Sayfa Sayıları: ss.43-46
  • İstanbul Üniversitesi Adresli: Evet

Özet

Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability concept in modern microcircuits. In this paper, a new simple expression based on polynomial aproximation is proposed for modeling the influence of hot-carrier effect on the MOSFET threshold voltage. The method is especially useful to determine the degradation of the MOS transistors in analogue building blocks and to predict the operation reliability therefore it provides ne possibilities in the analogue IC design.