Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift
IEE PROCEEDINGS-OPTOELECTRONICS, vol.151, no.5, pp.284-289, 2004 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 151 Issue: 5
- Publication Date: 2004
- Doi Number: 10.1049/ip-opt:20040935
- Journal Name: IEE PROCEEDINGS-OPTOELECTRONICS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.284-289
- Istanbul University Affiliated: Yes
Abstract
An investigation is presented of thermal annealing effects on spectral photoconductivity and photoluminescence in sequentially grown GaInNAs/GaAs and GaInAs/GaAs quantum well structures. Experiments have been carried out at temperatures between 30 K and 300 K. The results indicate that thermal annealing improves the optical quality of GaInNAs, but may cause either a blue shift, as commonly observed by other groups, or a red shift depending on the growth technique. The anneal-induced blue-shift behaviour can be explained in terms of two competing mechanisms involving the redistribution of nearest-neighbour configuration and the change of quantum well profile. The red shift is explained in terms of hydrogen-induced chemical effects.