Thickness dependence of AC conductivity in TlSe thin films


Saglam U. , Yakut S. , Karabak B., Bozoglu D.

CANADIAN JOURNAL OF PHYSICS, vol.97, no.11, pp.1182-1184, 2019 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 97 Issue: 11
  • Publication Date: 2019
  • Doi Number: 10.1139/cjp-2018-0758
  • Title of Journal : CANADIAN JOURNAL OF PHYSICS
  • Page Numbers: pp.1182-1184
  • Keywords: alternative conductivity, thickness dependence, thin films, thalium selenide, AC conductivity, BAND-STRUCTURE, DIELECTRIC FUNCTION, SPECTROSCOPY, SPECTRA

Abstract

Thalium selenide (TlSe), which has a lattice with tetragonal symmetry, is a member of the A(3)B(6) semiconductor group. The structure of TlSe is defined as chains where atoms inside are bonded with an ionic-covalent bond. TlSe thin films were deposited by thermal evaporation under a high vacuum on glass substrates. The structure of TlSe thin films is amorphous with a tetragonal structure. The AC conductivity measurements were operated via the measurements of capacitance and dielectric dissipation (tan delta) at room temperature. AC conductivity values change between 10(-11) and 10(-6) S/cm at the low-frequency side with decreasing thickness. Two different conduction regions were observed with increasing frequency. The region observed at the low-frequency side can be attributed to the motion of a chain-like part of the lattice, while the region observed at the high-frequency side can be attributed to side groups.