Optical and photoelectrical properties of the TlGaS2 ternary compound


Kalkan N. , Kalomiros J. A. , Hanias M., Anagnostopoulos A. N.

SOLID STATE COMMUNICATIONS, cilt.99, ss.375-379, 1996 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 99 Konu: 6
  • Basım Tarihi: 1996
  • Doi Numarası: 10.1016/0038-1098(96)00294-3
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Sayfa Sayıları: ss.375-379

Özet

Absorption and photoconductivity spectra of thin TlGaS2 layers are used to study the fundamental and other transitions of TlGaS2 in the energy region 1.0-3.0 eV and in the temperature range 10-300 K. One of the peaks resolved by photoconductivity measurements corresponds to the excitonic peak registered in the absorption spectrum of this compound. The temperature dependence of the critical energy and of the broadening parameter of this excitonic peak are presented. Most of the rest photoconductivity peaks are related to transitions from localized levels to the conduction band. Copyright (C) 1996 Elsevier Science Ltd

 Absorption and photoconductivity spectra of thin TlGaS2 layers are used to study the fundamental and other transitions of TlGaS2 in the energy region 1.0-3.0 eV and in the temperature range 10-300 K. One of the peaks resolved by photoconductivity measurements corresponds to the excitonic peak registered in the absorption spectrum of this compound. The temperature dependence of the critical energy and of the broadening parameter of this excitonic peak are presented. Most of the rest photoconductivity peaks are related to transitions from localized levels to the conduction band.