Muonium-acceptor interactions in gallium phosphide

Lichti R., Chow K., Davis E., Hitti B., Celebi Y. G., Cox S.

Physica B: Condensed Matter, vol.326, pp.167-170, 2003 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 326
  • Publication Date: 2003
  • Doi Number: 10.1016/s0921-4526(02)01592-2
  • Journal Name: Physica B: Condensed Matter
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.167-170
  • Istanbul University Affiliated: Yes


Zero-field muon spin depolarization measurements on heavily Zn-doped p-type GaP reveal several different states related to the Mu(+) defect center. We find that the Mu(BC)(+) ground state becomes mobile near 200 K. At slightly higher temperature Mu+ motion involves a second site, suggested to be T(P), which is relatively long lived up to 270 K. Zn-Mu complexes are formed at both low and high temperatures by reaction of Zn with a mobile Mu center, Mu(T)(0) below 100 K and Mu(T)(+) above 400 K. The high-temperature complex dissociates above 700 K with a characteristic energy of 1.3 eV. (C) 2002 Elsevier Science B.V. All rights reserved.