Journal of Materials Science: Materials in Electronics, vol.33, pp.10516-10523, 2022 (SCI-Expanded)
© 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.This study examined the dielectric properties of the titanium doped ZnO (TZO) thin film. The TZO thin film was deposited on the n-type Si substrate with the RF sputtering system and the metallization process was completed for electrical characterization. The dielectric parameters such as dielectric constant (ε′), dielectric loss (ε″) dielectric loss tangent (tan δ), and ac conductivity (σac) of the Au/TZO/n–Si structure were determined using capacitance (C) and conductance (G) data, obtained from the admittance measurements for 0.3, 0.5 and 1 MHz frequency values at room temperature. According to the experimental results, ε′–V and ε″–V curves were indicated an inductive behavior at 1 MHz. In addition, the variation of these dielectric parameters depending on the frequency in specific negative voltage and positive voltage regions were investigated. Experimental results showed that the dielectric parameters of the Au/TZO/n–Si structure are highly frequency dependent.