The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures

Basak H., Erol A., Donmez Ö., Arikan M. C., Saarinen M.

3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, Fransa, 4 - 07 Temmuz 2010, cilt.8 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 8
  • Doi Numarası: 10.1002/pssc.201000795
  • Basıldığı Şehir: Montpellier
  • Basıldığı Ülke: Fransa
  • İstanbul Üniversitesi Adresli: Evet

Özet

As-grown and annealed Ga0.6In0.4N0.005As0.995/GaAs with 1, 3, and 7 quantum well structures grown by Molecular Beam Epitaxy (MBE) are investigated using Photoluminescence (PL) and Photo-Induced Current Transient Spectroscopy (PICTS) measurements in order to determine the effects of the number of quantum wells and thermal annealing on optical properties and qualities of the structures. PICTS results reveal that all the samples with different quantum well numbers have two dominate trap levels which related to GaInNAs layer. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim