Characterization and modeling of power MOSFET switching times variations under constant electrical stress

Sezgin H. G., Ozcelep Y.

MICROELECTRONICS RELIABILITY, vol.55, pp.492-497, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 55
  • Publication Date: 2015
  • Doi Number: 10.1016/j.microrel.2015.01.002
  • Journal Name: MICROELECTRONICS RELIABILITY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.492-497
  • Istanbul University Affiliated: Yes

Abstract

In this paper, we proposed a simple and accurate degraded power MOSFET model for digital applications. The model provides to determine the electrical stress induced changes in power MOSFET switching characteristics. To establish the degraded power MOSFET and stress induced changes in switching parameters relation we consider the on-state-resistance of the power MOSFET as a voltage controlled resistor. We implemented a voltage non-linearly dependent resistor model in Pspice. We compared the experimental and simulation results to explore the model capability. (C) 2015 Elsevier Ltd. All rights reserved.