Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 mu m laser applications

Sun Y., Erol A., YILMAZ M., Arikan M. C., ULUĞ B., Ulug A., ...Daha Fazla

OPTICAL AND QUANTUM ELECTRONICS, cilt.40, sa.7, ss.467-474, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 40 Sayı: 7
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1007/s11082-007-9163-8
  • Dergi Adı: OPTICAL AND QUANTUM ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.467-474
  • Anahtar Kelimeler: GaInNAs, dilute nitrides, GAINNAS, MOBILITY
  • İstanbul Üniversitesi Adresli: Evet

Özet

We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga1-x In (x) N (y) As1-y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by band-to-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.