Publications & Works

Publication Network

Published journal articles indexed by SCI, SSCI, and AHCI

Electron energy relaxation mechanism in n-type InxGa1-xAs1-yBiy alloys under electric and magnetic fields

Aydin M., Yilmaz S. N., Erol A., Bork J., Zide J., Donmez Ö.
PHYSICA SCRIPTA , vol.99, pp.105909, 2024 (SCI-Expanded) Sustainable Development

Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer

AYDIN M., Bork J., Zide J., EROL A., DÖNMEZ Ö.
Physica B: Condensed Matter , vol.685, 2024 (SCI-Expanded) identifier

Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE

Gunes M., Aydın M., Dönmez Ö., Gümüş C., Erol A., Marroquin J., et al.
Materials Science and Engineering: B , vol.305, 2024 (SCI-Expanded) Sustainable Development identifier identifier

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

AYDIN M., YILMAZ S. N., Bork J., Zide J., EROL A., DÖNMEZ Ö.
Applied Physics A: Materials Science and Processing , vol.130, no.7, 2024 (SCI-Expanded) Creative Commons License identifier identifier

Determination of electronic band structure of quaternary ferromagnetic Ga0.97-yMn0.03CryAs epitaxial layers

Dönmez Ö., Gunes M., Henini M., Erol A.
PHYSICA B-CONDENSED MATTER , vol.665, 2023 (SCI-Expanded) identifier identifier

Analysis of mixed optical transitions in dilute magnetic AlAs/GaAs/ GaMnAs quantum wells grown on high substrate index by molecular beam epitaxy

Kerimova S., Dönmez Ö., Gunes M., Kuruoğlu F., Aydın M., Gümüş C., et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , vol.290, 2023 (SCI-Expanded) Sustainable Development identifier identifier

Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure

Dönmez Ö., Aydın M., Mutlu S., Puustinen J., Hilska J., Guina M., et al.
Materials Science in Semiconductor Processing , vol.154, 2023 (SCI-Expanded) Sustainable Development identifier identifier

High-Field Electron-Drift Velocity in n-Type Modulation-Doped GaAs<sub>0.96</sub>Bi<sub>0.04</sub> Quantum Well Structure

Aydin M., Mutlu S., Erol A., Puustinen J., Hilska J., Guina M., et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS , vol.16, no.11, 2022 (SCI-Expanded) identifier identifier

A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures

Dönmez Ö., Erol A., Çetinkaya Ç., Cokduygulular E., Aydin M., Yıldırım S., et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.36, no.11, 2021 (SCI-Expanded) identifier identifier

Temperature-dependent sandwich and in-plane optical characterization of ternary chalcogenide TlSbS2

Sarcan F., Aydin M., Kuruoğlu F., Dönmez Ö., Yıldırım S., Erol A.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.272, 2021 (SCI-Expanded) Sustainable Development identifier identifier

Photoluminescence characteristic of as-grown and thermally annealed n-and p-type modulation-doped Ga(0.68)In(0.32)N(x)AS(1-x)/GaAs quantum well structures

Donmez O., Sarcan F., Erol A., Ungan F., Sari H.
THIN SOLID FILMS , vol.732, 2021 (SCI-Expanded) Sustainable Development identifier identifier

Determination of the acoustic phonon-hot carriers interaction in n- and p-type modulation-doped GaInNAs/GaAs quantum wells

Dönmez Ö., Sarcan F., Erol A.
Physica B: Condensed Matter , vol.612, 2021 (SCI-Expanded) Sustainable Development identifier identifier

The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure

Gunes M., Dönmez Ö., Gumus C., Erol A., Alghamdi H., Alhassan S., et al.
PHYSICA B-CONDENSED MATTER , vol.602, 2021 (SCI-Expanded) Sustainable Development identifier identifier

Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures

Dönmez Ö., Aydın M., Ardali S., Yildirim S., Tiras E., Erol A., et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.35, 2020 (SCI-Expanded) identifier identifier

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Donmez Ö., Aydin M., Ardali S., Yildirim S., Tiras E., Nutku F., et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.35, no.2, 2020 (SCI-Expanded) identifier identifier

Effects of Thermal Annealing and Selective Chemical Etching on Structural and Optical Properties of GaAsBi Epilayer with Droplet Systems

Erucar T., Kara K., Donmez Ö., Erol A., Arnoult A., Fontaine C.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY , vol.19, no.12, pp.7846-7852, 2019 (SCI-Expanded) identifier identifier

Characterization of a GaAs/GaAsBi pin solar cell

Muhammetgulyyev A., Erbas Ö. G., Kinaci B., Donmez Ö., Celebi Y. G., Erol A.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.34, no.8, 2019 (SCI-Expanded) Sustainable Development identifier identifier

Optical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates

Gunes M., Ukelge M. O., Donmez Ö., Erol A., Gumus C., Alghamdi H., et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.33, no.12, 2018 (SCI-Expanded) identifier identifier

A study of electric transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures under a high electric field

Sarcan F., Mutlu S., Cokduygulular E., Donmez Ö., Erol A., Puustinen J., et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.33, no.6, 2018 (SCI-Expanded) identifier identifier

Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures

Cetinkaya C., Cokduygulular E., Nutku F., Donmez Ö., Puustinen J., Hilska J., et al.
JOURNAL OF ALLOYS AND COMPOUNDS , vol.739, pp.987-996, 2018 (SCI-Expanded) Sustainable Development identifier identifier

Characterization of emitted light from travelling Gunn domains in Al0.08Ga0.92As alloy based Gunn devices

Cetinkaya C., Mutlu S., Donmez Ö., Erol A.
SUPERLATTICES AND MICROSTRUCTURES , vol.111, pp.744-753, 2017 (SCI-Expanded) Sustainable Development identifier identifier

Effect of thermal annealing and nitrogen composition on quantum transport in GaInNAs alloy based modulation doped quantum well structures

Nutku F., Donmez Ö., Cokduygulular E., Sarcan F., Kuruoglu F., Mutlu S., et al.
JOURNAL OF ALLOYS AND COMPOUNDS , vol.695, pp.404-409, 2017 (SCI-Expanded) identifier identifier

Thermal annealing effects on optical and structural properties of GaBiAs epilayers: Origin of the thermal annealing-induced redshift in GaBiAs

Donmez Ö., Kara K., Erol A., Akalin E., Makhloufi H., Arnoult A., et al.
JOURNAL OF ALLOYS AND COMPOUNDS , vol.686, pp.976-981, 2016 (SCI-Expanded) identifier identifier

Optical properties of GaBiAs single quantum well structures grown by MBE

Donmez Ö., Erol A., Arikan M. C., Makhloufi H., Arnoult A., Fontaine C.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.30, no.9, 2015 (SCI-Expanded) identifier identifier

Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells

Sarcan F., Nutku F., Donmez Ö., Kuruoglu F., Mutlu S., Erol A., et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.48, no.30, 2015 (SCI-Expanded) identifier identifier

Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures

Nutku F., Donmez Ö., Sarcan F., Erol A., Puustinen J., Arikan M. C., et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.118, no.3, pp.823-829, 2015 (SCI-Expanded) identifier identifier

Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures

Donmez Ö., Sarcan F., Lisesivdin S. B., Vaughan M. P., Erol A., Gunes M., et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.29, no.12, 2014 (SCI-Expanded) identifier identifier

Anisotropic electron g factor as a probe of the electronic structure of GaBixAs1-x/GaAs epilayers

Broderick C. A., Mazzucato S., Carrere H., Amand T., Makhloufi H., Arnoult A., et al.
PHYSICAL REVIEW B , vol.90, no.19, 2014 (SCI-Expanded) identifier identifier

Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys

Sarcan F., Donmez Ö., Kara K., Erol A., Akalin E., Arikan M. C., et al.
NANOSCALE RESEARCH LETTERS , vol.9, 2014 (SCI-Expanded) identifier identifier identifier

Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures

Donmez Ö., Sarcan F., Erol A., Gunes M., Arikan M. C., Puustinen J., et al.
NANOSCALE RESEARCH LETTERS , vol.9, 2014 (SCI-Expanded) identifier identifier identifier

Influence of nitrogen on hole effective mass and hole mobility in p-type modulation doped GaInNAs/GaAs quantum well structures

Sarcan F., Donmez Ö., Erol A., Gunes M., Arikan M. C., Puustinen J., et al.
APPLIED PHYSICS LETTERS , vol.103, no.8, 2013 (SCI-Expanded) identifier identifier

A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al (x) Ga1-x As quantum well structures

Donmez Ö., Nutku F., Erol A., Arikan C. M., Ergun Y.
NANOSCALE RESEARCH LETTERS , vol.7, 2012 (SCI-Expanded) identifier identifier identifier

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

Erol A., Akalin E., Sarcan F., Donmez Ö., Akyuz S., Arikan C. M., et al.
NANOSCALE RESEARCH LETTERS , vol.7, 2012 (SCI-Expanded) identifier identifier identifier

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells

Sarcan F., Donmez Ö., Gunes M., Erol A., Arikan M. C., Puustinen J., et al.
NANOSCALE RESEARCH LETTERS , vol.7, 2012 (SCI-Expanded) identifier identifier identifier

The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

Donmez Ö., Gunes M., Erol A., Arikan C. M., Balkan N., Schaff W. J.
NANOSCALE RESEARCH LETTERS , vol.7, 2012 (SCI-Expanded) identifier identifier identifier

High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN

Donmez Ö., Gunes M., Erol A., Arikan M. C., Balkan N.
JOURNAL OF APPLIED PHYSICS , vol.110, no.10, 2011 (SCI-Expanded) identifier identifier

Influence of high electron concentration on band gap and effective electron mass of InN

Donmez Ö., YILMAZ M., Erol A., ULUĞ B., Arikan M. C., Ulug A., et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS , vol.248, no.5, pp.1172-1175, 2011 (SCI-Expanded) identifier identifier

Articles Published in Other Journals

Effect of Annealing on Electronic Transport in Modulation-doped In0.32Ga0.68As/GaAs Quantum Well Structures

Rajhi A., Aydın M., Dönmez Ö., Sarcan F., Erol A.
Physics and Astronomy Reports , vol.2, no.1, pp.29-36, 2024 (Peer-Reviewed Journal) Creative Commons License

Optical characterization of Ga0.965Mn0.03Cr0.005As thin film grown by molecular beam epitaxy

Dönmez Ö., Güneş M., Erol A.
Artıbilim: Adana Alparslan Türkeş Bilim ve Teknoloji Üniversitesi Fen Bilimleri Dergisi , vol.4, no.2, pp.44-49, 2021 (Peer-Reviewed Journal)

Investigating above-bandgap and below-bandgap optical transition in GaBiAs epilayers by photoreflectance spectroscopy

DÖNMEZ Ö., EROL A.
TURKISH JOURNAL OF PHYSICS , vol.44, no.4, pp.384-393, 2020 (ESCI) identifier identifier

Refereed Congress / Symposium Publications in Proceedings

Anomalous Temperature-Dependent Carrier Dynamics and Magnetotransport Properties of InSb Grown by MBE and MOCVD

AYDIN M., GÜNEŞ M., DÖNMEZ Ö., Henini M., EROL A.
18th International Nanoscience and Nanotechnology Conference, İstanbul, Turkey, 26 - 28 August 2024

Formation of quasi-two-dimensional electron transport in bulk InGaAsBi layer

AYDIN M., YILMAZ S. N., EROL A., Bork J., Zide J., DÖNMEZ Ö.
18th International Nanoscience and Nanotechnology Conference, İstanbul, Turkey, 26 - 28 August 2024

An investigation of the doping effects on the structural properties of the β-Ga2O3 (001)

Yılmaz S. N., Doğan Ü., Sarcan F., Erol A., Kuş E., Nuhoğlu D., et al.
18th International Nanoscience and Nanotechnology Conference, İstanbul, Turkey, 26 - 28 August 2024, pp.42

Yüksek Sıcaklığa Dayanıklı GaInP/GaAs heteroeklem Güneş Hücrelerinin Tasarım, Simülasyon ve Karekterizasyonu

Dolgun M. F., Dönmez Ö.
Fen Fakültesi Fizik Bölümü İFD Poster Şenliği, İstanbul, Turkey, 24 May 2024, pp.1 Sustainable Development

Uyumsuz Malzemeler: Temel özellikler ve farklılık yaratan uygulamaları

Dönmez Ö.
Astronomi ve Fizik Günleri (Boğaziçi Üniversitesi), İstanbul, Turkey, 20 - 21 April 2024 Sustainable Development

Effect of rapid thermal annealing on structural and morphological properties of n-type GaAsBi epilayer

AYDIN M., DÖNMEZ Ö., EROL A.
16th NANOSCIENCE &amp; NANOTECHNOLOGY CONFERENCE, Ankara, Turkey, 5 - 08 September 2022

An electric field induced hot electron transport in GaAsBi alloys

Aydın M., Mutlu S., Dönmez Ö., Erol A.
NANOTR, Ankara, Turkey, 5 - 08 September 2022, pp.1

OPTICAL AND STRUCTURAL CHARACTERISATION OF TERNARY CHALCOGENIDE TLSBSE2

Aydın M., Kuruoğlu F., Sarcan F., Dönmez Ö., Yıldırım S., Erol A.
International Marmara Sciences Congress (Autumn) 2020, Kocaeli, Turkey, 4 - 05 December 2020, pp.49

Electronic Transport Properties of Ga1-x-yMnxCryAs Films

ÇOKDUYGULULAR E., DÖNMEZ Ö., EROL A., Güneş M.
Türk Fizik Derneği 34. Uluslararası Fizik Kongresi, Muğla, Turkey, 5 - 09 September 2018, pp.277

Electrical Properties Of Modulation Doped Bi-Containing Highly Mismatched Quantum Well Structures

ÇETİNKAYA Ç., ÇOKDUYGULULAR E., DÖNMEZ Ö., EROL A., NUTKU F., YILDIRIM S.
Turkish Physical Society 34th International Physics Congress, Muğla, Turkey, 5 - 09 September 2018, vol.34, pp.273

EFFECT OF BI ALLOYING ON THE OPTICAL PROPERTIES OF MODULATION DOPED GAASBI/ALGAAS QUANTUM WELL STRUCTURES

ÇETİNKAYA Ç., ÇOKDUYGULULAR E., NUTKU F., DÖNMEZ Ö., EROL A.
Türk Fizik Derneği 34. Uluslararası Fizik Kongresi, Muğla, Turkey, 5 - 09 September 2018, pp.273

ELECTRONIC TRANSPORT IN n-type MODULATION DOPED GaInAs/GaAs and GaInNAs/GaAs QUANTUM WELL STRUCTURES

Rajhi A., Aydın M., ÇOKDUYGULULAR E., ÇETİNKAYA Ç., DÖNMEZ Ö., YILDIRIM S., et al.
Türk Fizik Derneği 34. Uluslararası Fizik Kongresi, Muğla, Turkey, 5 - 09 September 2018, pp.161

A study on deep level defect assisted absorption in dilute GaBiAs alloys

Dönmez Ö., Erol A.
TurkishPhysical Society 34. International Physics Congress, Muğla, Turkey, 3 - 07 September 2018, vol.1, no.1, pp.260

A study on deep level defect assisted absorption in dilute GaBiAs alloys

Dönmez Ö.
TurkishPhysical Society 34. International Physics Congress, Muğla, Turkey, 3 - 07 September 2018, vol.1, no.1, pp.260

A Comparison Of Characteristics of Heterojunction pin Solar Cells Based On Dilute Bismide And Dilute Nitride Alloys

Muhammedgulyev A., SARCAN F., Göksel Ö., KINACI B., DÖNMEZ Ö., ÇELEBİ Y. G., et al.
International Conference On Condensed Matter And Materials science, Adana, Turkey, 11 - 15 October 2017, pp.25

Optical and Electrical Properties of n- and p-type Modulation Doped GaAs1-xBix/Al0.15Ga0.85As Single Quantum Well Heterostructure

ÇETİNKAYA Ç., ÇOKDUYGULULAR E., NUTKU F., DÖNMEZ Ö., Puustinen J., EROL A., et al.
International Conference on Condensed Matter and Material Sciences, Adana, Turkey, 11 - 15 October 2017, pp.125

Photoluminescence Study of GaAs/AlGaAs and GaAsBi/AlGaAs Modulation Doped Quantum Well Structures

ÇETİNKAYA Ç., ÇOKDUYGULULAR E., NUTKU F., DÖNMEZ Ö., Puustinen J., EROL A., et al.
Türk Fizik Derneği 33. Uluslararası Fizik Kongresi, Muğla, Turkey, 6 - 10 September 2017, pp.125

Optical characterization of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures

ÇETİNKAYA Ç., ÇOKDUYGULULAR E., NUTKU F., DÖNMEZ Ö., Puustinen J., EROL A., et al.
8. International Workshop on Bismuth- Containing Semiconductors Philipps-Universitat Marburg, Marburg, Germany, 23 - 26 July 2017, pp.125

Characterization Of Heterojunction pin solar Cells Based On Dilute Bismide And Dilute Nitride

Muhammedgulyev A., SARCAN F., KINACI B., DÖNMEZ Ö., EROL A.
8th International Workshop on Bismuth-Containing Semiconductors, Marburg, Germany, 23 July 2017 - 26 July 2016, pp.97

Influence of chemical process on structural and optical properties of as-grown and thermal annealed GaAsBi alloys

Eruçar T., DÖNMEZ Ö., EROL A.
8th International Workshop on Bismuth-Containing Semiconductors, Marburg, Germany, 23 - 26 July 2017, vol.1, no.1, pp.1

Electronic bandstructure of semiconductor dilute bismide structures

ERUCAR T., NUTKU F., DÖNMEZ Ö., EROL A.
Turkish Physical Society 32nd International Physics Congress, TPS 2016, Konacik-Bodrum, Turkey, 6 - 09 September 2016, vol.1815 Creative Commons License identifier identifier

CHARACTERIZATION OF HETERO-STRUCTURE SINGLE PIN JUNCTION SOLAR CELL BASED ON III-N-V AND III-Bİ-V ALLOYS

Muhammetgulyyev A., KINACI B., DÖNMEZ Ö., EROL A.
SOLARTR 2016, İstanbul, Turkey, 6 - 08 December 2016, pp.212

Light Emission from Al0.08Ga0.92As Gunn Device

ÇETİNKAYA Ç., MUTLU S., DÖNMEZ Ö., EROL A.
Nanophotonics and Micro/Nano Optics International Conference, Paris, France, 1 - 10 December 2016, pp.10

Electronic transport properties of p-type GaInNAs/GaAs quantum well structures

MUTLU S., ÇOKDUYGULULAR E., ÇETİNKAYA Ç., SARCAN F., DÖNMEZ Ö., EROL A.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Turkey, 6 - 09 September 2016, pp.125

Investigation of Electronic Transport Properties in GaInNAs/GaAs Quantum Well Structures

NUTKU F., DÖNMEZ Ö., ÇOKDUYGULULAR E., SARCAN F., KURUOĞLU F., MUTLU S., et al.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Turkey, 6 - 09 September 2016, pp.125

INVESTIGATION OF ELECTRONIC TRANSPORT PROPERTIES IN GaInNAs/GaAs QUANTUM WELL STRUCTURES

NUTKU F., DÖNMEZ Ö., Çokduygulular E., SARCAN F., KURUOĞLU F., MUTLU S., et al.
Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016, vol.32, pp.129

Stimulated Light Emission from Gunn Domains in Fabry Pérot Al0.08 Ga0.92As Gunn Device

ÇETİNKAYA Ç., MUTLU S., DÖNMEZ Ö., EROL A.
Turkish Pyhsical Society 32nd International Pyhsics Congress, Muğla, Turkey, 6 - 10 September 2016, pp.89

Investigation of Light Emission Based on Gunn Effect in n –type GaAs

ÇETİNKAYA Ç., MUTLU S., DÖNMEZ Ö., EROL A.
9th International Physics Conference of the Balkan Physical Union, İstanbul, Turkey, 24 - 27 August 2015, pp.421

Temperature and electric field dependence of localization in modulation doped GaInNAs/GaAs quantum well structures

YILDIRIM S., EROL A., SARCAN F., NUTKU F., KURUOĞLU F., DÖNMEZ Ö.
9th International Physics Conference of the Balkan Physical Union-BPU9, İstanbul, Turkey, 24 - 27 August 2015, vol.9, pp.161

Optical and structural properties of as-grown and annealed GaAsBi epilayers

DÖNMEZ Ö., KARA K., EROL A., Makhloufi ., Arnoult A., Fontaine .
9th International Physics Conference of the Balkan Physical Union-BPU9, İstanbul, Turkey, 24 - 27 August 2015, pp.152

Weak Localization and Weak Antilocalization in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Wells

NUTKU F., SARCAN F., DÖNMEZ Ö., KURUOĞLU F., MUTLU S., EROL A., et al.
İstanbul Üniversitesi Dünya Teknoloji, İnovasyon ve Girişimcilik Konferansı, İSTANBUL, TÜRKIYE, 28-30 Mayıs 2015, İstanbul, Turkey, 28 - 30 May 2015, pp.80

Analytic Modeling Of Temperature Dependence of 2D Carrier Mobility In As Grown And Annealed GaInNAs/GaAs Quantum Well Structures

DÖNMEZ Ö., SARCAN F., Vaughan M., EROL A., Güneş M., ARIKAN M. Ç., et al.
Türk Fizik Derneği 31. Uluslararası Fizik Kongresi,, Muğla, Turkey, 21 - 25 July 2014, pp.143

Magnetoresistance in n- and p-type Gainnas Gaas Modulation Doped Quantum Well Structures

NUTKU F., SARCAN F., DÖNMEZ Ö., EROL A., ARIKAN M. Ç.
Türk Fizik Derneği 31.Uluslararası Fizik Kongresi, Muğla, Bodrum., Muğla, Turkey, 21 - 25 July 2014, pp.137

Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures,

DÖNMEZ Ö.
TPS 31. International Physics Congress, Muğla, Turkey, 21 July - 24 August 2014, pp.242

Photomodulated reflectance and Photoluminesance Study on GaAsBi Epilayers grown by Molecular Beam Epitaxy

DÖNMEZ Ö.
5th International Workshop on Bismuth-Containing Semiconductors, Cork, Ireland, 20 - 23 July 2014, pp.3

Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures

DÖNMEZ Ö., SARCAN F., EROL A., Güneş M., ARIKAN M. Ç., Puustinen J., et al.
Novel Gain Materials And Devices Based On III-V-N/Bi Compounds, İstanbul, Turkey, 24 - 26 September 2013, pp.40

Electronic Transport in n- and p-type modulation doped Ga1-xInxNyAs1-y /GaAs quantum well structures

ÇETİNKAYA Ç., DÖNMEZ Ö., EROL A., Arıkan Ç., Puustinen J., Mircea G.
30th International Physics Congress by Turkish Physical Society, Muğla, Turkey, 1 - 02 September 2013, pp.1

Effect of Alloy and Interface Roughness Scatterings On The Carrier Mobility in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Well Structures

SARCAN F., DÖNMEZ Ö., Vaughan M. P., EROL A., ARIKAN M. Ç., Puustinen J., et al.
17th European Molecular Beam Epitaxy Workshop, Levi, Finland, 10 - 13 March 2013, pp.246

Investigation Of Nitrogen Dependent In Plane Electron And Hole Effective Masses In GaInNAs/GaAs Quantum Well

SARCAN F., DÖNMEZ Ö., Vaughan M. P., EROL A., ARIKAN M. Ç., Puustinen J., et al.
17th European Molecular Beam Epitaxy Workshop, Levi, Finland, 10 - 13 March 2013, pp.300

An Analysis Of Scattering Mechanisms In As Grown And Annealed N And P Type Modulation Doped Gainnas Gaas Quantum Wells

SARCAN F., DÖNMEZ Ö., Güneş M., EROL A., ARIKAN M. Ç., Puustinen J., et al.
Türk Fizik Derneği 29. Uluslararası Fizik Kongresi,, Muğla, Turkey, 5 - 08 September 2012, pp.139

USING INFRARED AND RAMAN SPECTROSCOPY TECHNIQUES IN ANALYSIS OF Ga1-xInxNyAs1-y /GaAs QUANTUM WELL STRUCTURES

AKALIN E., EROL A., Sarcan F., DÖNMEZ Ö., Arıkan Ç. M., Puustinnen J., et al.
Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, Turkey, 1 - 04 September 2012, pp.3

An Analysis of Hall Mobility In As Grown And Annealed n- and p-type Modulation Doped GaInNAs/GaAs quantum Wells

SARCAN F., DÖNMEZ Ö., Güneş M., EROL A., ARIKAN M. Ç., Puustinen J., et al.
International Conference On Superlattices, Nanostructures and Nanodevices, Dresden, Germany, 22 - 27 July 2012, pp.359

A Comprehensive Study Of Optical Characterization of n- and p-type As Grown And Annealed Modulation Doped Gaas Gainnas Qw Structures

DÖNMEZ Ö., SARCAN F., EROL A., ARIKAN M. Ç., Ungan F., KAsapoğlu E., et al.
International Conference On Superlattices, Nanostructures and Nanodevices, Dresden, Germany, 22 - 27 July 2012

A Study of Photomodulated Reflectance on Staircase n-type GaAs/AlxGa1-xAs Quantum Well Structures

DÖNMEZ Ö., NUTKU F., EROL A., ARIKAN M. Ç., ERGÜN Y.
International Conference on Superlattices, Nanostructures and Nanodevices, ICSNN2012, Germany, 1 - 04 July 2012, pp.91

Effect of Thermal Annealing On Optical And Electronic Transport Properties in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Wells

SARCAN F., DÖNMEZ Ö., Güneş M., EROL A., ARIKAN M. Ç., Puustinen J., et al.
European Materials Research Society,, Paris, France, 14 - 18 May 2012, pp.14

A Comparative Study On Electronic Transport Properties of n- and p-type Modulation Doped Gainas Gaas And Dilute Nitride GaInNAs/GaAs Quantum Well

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