Publications & Works

Published journal articles indexed by SCI, SSCI, and AHCI

Power Loss Mechanisms in Indium-Rich InGaN Samples

JOURNAL OF ELECTRONIC MATERIALS, vol.45, no.2, pp.867-871, 2016 (SCI-Expanded) identifier identifier

Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, vol.177, no.10, pp.729-733, 2012 (SCI-Expanded) identifier identifier

Refereed Congress / Symposium Publications in Proceedings

Gunn Effect in InGaAs Epilayer Structures

16th NANOSCIENCE & NANOTECHNOLOGY CONFERENCE, Ankara, Turkey, 5 - 08 September 2022, pp.67 Creative Commons License

Optical and electrical characterızatıon of InGaAs epitaxial layers

3rd Internatıonal Eurasıan Conference On Scıence, Engıneerıng And Technology, Ankara, Turkey, 15 - 17 December 2021, pp.137

Fabrication and Characterisation of InGaAs Gunn Diode-Based Light Emitting Device

3rd Internatıonal Eurasıan Conference On Scıence, Engıneerıng And Technology, Ankara, Turkey, 15 - 17 December 2021, pp.135

Hot Electron transport based devices for optoelectonics

international conference on condensed matter and materials science, Adana, Turkey, 11 - 15 October 2017, pp.21

Evolution of HELLISH devices: Colurful story of HELLISH devices from IR to VIS light

The physics of optoelectronic materials and devices, Essex, United Kingdom, 27 - 28 March 2017, pp.41

Light Emission from Al0.08Ga0.92As Gunn Device

Nanophotonics and Micro/Nano Optics International Conference, Paris, France, 1 - 10 December 2016, pp.10

Electronic transport properties of p-type GaInNAs/GaAs quantum well structures

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Turkey, 6 - 09 September 2016, pp.125

INVESTIGATION OF ELECTRONIC TRANSPORT PROPERTIES IN GaInNAs/GaAs QUANTUM WELL STRUCTURES

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016, vol.32, pp.129

Investigation of Electronic Transport Properties in GaInNAs/GaAs Quantum Well Structures

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Turkey, 6 - 09 September 2016, pp.125

Stimulated Light Emission from Gunn Domains in Fabry Pérot Al0.08 Ga0.92As Gunn Device

Turkish Pyhsical Society 32nd International Pyhsics Congress, Muğla, Turkey, 6 - 10 September 2016, pp.89

Investigation of Light Emission Based on Gunn Effect in n –type GaAs

9th International Physics Conference of the Balkan Physical Union, İstanbul, Turkey, 24 - 27 August 2015, pp.421

Weak Localization and Weak Antilocalization in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Wells

İstanbul Üniversitesi Dünya Teknoloji, İnovasyon ve Girişimcilik Konferansı, İSTANBUL, TÜRKIYE, 28-30 Mayıs 2015, İstanbul, Turkey, 28 - 30 May 2015, pp.80

High Field Hot Electron Energy Relaxation in InGaN/GaN Samples

Scientific final meeting of the COST-MP0805 action. (Novel gain materials and devices based on III-V-N compounds), İstanbul, Turkey, 24 - 26 October 2013, pp.14

Hot Electron Energy Relaxation in Al 0.83 In 0.17 N/AlN/GaN heterostructure

Scientific final meeting of the COST-MP0805 action, İstanbul, Turkey, 24 - 26 October 2013, pp.1