Yayınlar & Eserler

Yayın Ağı
Makaleler 14
Tümü (14)
SCI-E, SSCI, AHCI (14)
SCI-E, SSCI, AHCI, ESCI (14)
Scopus (14)

1. Light Logic Gates with GaAs-Based Structures

Sonmez F., Ardali S., Arpapay B., MUTLU S., Ergurhan A. A., Senel O., et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS , cilt.18, sa.9, 2024 (SCI-Expanded) identifier identifier

2. A novel InGaN-based bidirectional wavelength converter and optical amplifier based on hot electron-induced blue light-emitting device

MUTLU S., EROL A., Tiras E.
JOURNAL OF LUMINESCENCE , cilt.272, 2024 (SCI-Expanded) identifier identifier

3. Enhancement of light emission characteristic of a GaAs-based Gunn light emitting diode with a quasi-cavity

MUTLU S., KALYON G., SARCAN F., ERBAŞ Ö. G., EROL A.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.169, 2024 (SCI-Expanded) identifier identifier

4. InGaAs-based Gunn light emitting diode

Kalyon G., Mutlu S., Kuruoğlu F., Pertikel İ., Demir İ., Erol A.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.159, 2023 (SCI-Expanded) identifier identifier

5. Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure

Dönmez Ö., Aydın M., Mutlu S., Puustinen J., Hilska J., Guina M., et al.
Materials Science in Semiconductor Processing , cilt.154, 2023 (SCI-Expanded) Sürdürülebilir Kalkınma identifier identifier

6. High-Field Electron-Drift Velocity in n-Type Modulation-Doped GaAs0.96Bi0.04 Quantum Well Structure

Aydin M., Mutlu S., Erol A., Puustinen J., Hilska J., Guina M., et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS , cilt.16, sa.11, 2022 (SCI-Expanded) identifier identifier

7. A novel hot carrier-induced blue light-emitting device

Mutlu S., Erol A., Arslan E., Ozbay E., Lişesivdin S. B., Tiras E.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.881, 2021 (SCI-Expanded) identifier identifier

8. A study of electric transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures under a high electric field

Sarcan F., Mutlu S., Cokduygulular E., Donmez Ö., Erol A., Puustinen J., et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY , cilt.33, sa.6, 2018 (SCI-Expanded) identifier identifier

9. Characterization of emitted light from travelling Gunn domains in Al0.08Ga0.92As alloy based Gunn devices

Cetinkaya C., Mutlu S., Donmez Ö., Erol A.
SUPERLATTICES AND MICROSTRUCTURES , cilt.111, ss.744-753, 2017 (SCI-Expanded) Sürdürülebilir Kalkınma identifier identifier

10. Effect of thermal annealing and nitrogen composition on quantum transport in GaInNAs alloy based modulation doped quantum well structures

Nutku F., Donmez Ö., Cokduygulular E., Sarcan F., Kuruoglu F., Mutlu S., et al.
JOURNAL OF ALLOYS AND COMPOUNDS , cilt.695, ss.404-409, 2017 (SCI-Expanded) identifier identifier

11. Power Loss Mechanisms in Indium-Rich InGaN Samples

TIRAŞ E., Mutlu S., Balkan N.
JOURNAL OF ELECTRONIC MATERIALS , cilt.45, sa.2, ss.867-871, 2016 (SCI-Expanded) identifier identifier

12. Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells

Sarcan F., Nutku F., Donmez Ö., Kuruoglu F., Mutlu S., Erol A., et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.48, sa.30, 2015 (SCI-Expanded) identifier identifier

13. Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Khalil H. M., Mazzucato S., Ardali S., Celik O., Mutlu S., Royall B., et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , cilt.177, sa.10, ss.729-733, 2012 (SCI-Expanded) identifier identifier

14. Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

Tiras E., Celik O., Mutlu S., Ardali S., Lisesivdin S. B., Ozbay E.
SUPERLATTICES AND MICROSTRUCTURES , cilt.51, sa.6, ss.733-744, 2012 (SCI-Expanded) identifier identifier
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 15

1. Gunn Oscillations in n-type InGaAs Epilayer Structures

Kalyon G., Demir İ., Perkitel İ., Mutlu S., Erol A.
INTERNATIONAL GRADUATE RESEARCH SYMPOSIUM, 1 - 03 Haziran 2022, ss.332, (Özet Bildiri) Creative Commons License

2. Gunn Effect in InGaAs Epilayer Structures

Kalyon G., Mutlu S., Perkitel İ., Demir İ., Erol A.
16th NANOSCIENCE & NANOTECHNOLOGY CONFERENCE, Ankara, Türkiye, 5 - 08 Eylül 2022, ss.67, (Özet Bildiri) Creative Commons License

3. An electric field induced hot electron transport in GaAsBi alloys

Aydın M., Mutlu S., Dönmez Ö., Erol A.
NANOTR, Ankara, Türkiye, 5 - 08 Eylül 2022, ss.1, (Özet Bildiri)

4. Optical and electrical characterızatıon of InGaAs epitaxial layers

Amını S. M., Kalyon G., Mutlu S., Perkıtel I., Demir İ., Erol A.
3rd Internatıonal Eurasıan Conference On Scıence, Engıneerıng And Technology, Ankara, Türkiye, 15 - 17 Aralık 2021, ss.137, (Özet Bildiri)

5. Fabrication and Characterisation of InGaAs Gunn Diode-Based Light Emitting Device

Kalyon G., Mutlu S., Perkıtel I., Demir İ., Erol A.
3rd Internatıonal Eurasıan Conference On Scıence, Engıneerıng And Technology, Ankara, Türkiye, 15 - 17 Aralık 2021, ss.135, (Özet Bildiri)

6. Hot Electron transport based devices for optoelectonics

EROL A., MUTLU S., Lisesivdin S. B., Tıraş E.
international conference on condensed matter and materials science, Adana, Türkiye, 11 - 15 Ekim 2017, ss.21, (Tam Metin Bildiri)

7. Evolution of HELLISH devices: Colurful story of HELLISH devices from IR to VIS light

MUTLU S., Tıraş E., EROL A., Lisesivdin S. B.
The physics of optoelectronic materials and devices, Essex, Birleşik Krallık, 27 - 28 Mart 2017, ss.41, (Tam Metin Bildiri)

8. Light Emission from Al0.08Ga0.92As Gunn Device

ÇETİNKAYA Ç., MUTLU S., DÖNMEZ Ö., EROL A.
Nanophotonics and Micro/Nano Optics International Conference, Paris, Fransa, 1 - 10 Aralık 2016, ss.10, (Tam Metin Bildiri)

9. Investigation of Electronic Transport Properties in GaInNAs/GaAs Quantum Well Structures

NUTKU F., DÖNMEZ Ö., ÇOKDUYGULULAR E., SARCAN F., KURUOĞLU F., MUTLU S., et al.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Türkiye, 6 - 09 Eylül 2016, ss.125, (Özet Bildiri)

10. Electronic transport properties of p-type GaInNAs/GaAs quantum well structures

MUTLU S., ÇOKDUYGULULAR E., ÇETİNKAYA Ç., SARCAN F., DÖNMEZ Ö., EROL A.
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Türkiye, 6 - 09 Eylül 2016, ss.125, (Tam Metin Bildiri)

11. Stimulated Light Emission from Gunn Domains in Fabry Pérot Al0.08 Ga0.92As Gunn Device

ÇETİNKAYA Ç., MUTLU S., DÖNMEZ Ö., EROL A.
Turkish Pyhsical Society 32nd International Pyhsics Congress, Muğla, Türkiye, 6 - 10 Eylül 2016, ss.89, (Özet Bildiri)

12. Investigation of Light Emission Based on Gunn Effect in n –type GaAs

ÇETİNKAYA Ç., MUTLU S., DÖNMEZ Ö., EROL A.
9th International Physics Conference of the Balkan Physical Union, İstanbul, Türkiye, 24 - 27 Ağustos 2015, ss.421, (Tam Metin Bildiri)

13. Weak Localization and Weak Antilocalization in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Wells

NUTKU F., SARCAN F., DÖNMEZ Ö., KURUOĞLU F., MUTLU S., EROL A., et al.
İstanbul Üniversitesi Dünya Teknoloji, İnovasyon ve Girişimcilik Konferansı, İSTANBUL, TÜRKIYE, 28-30 Mayıs 2015, İstanbul, Türkiye, 28 - 30 Mayıs 2015, ss.80, (Özet Bildiri)

14. High Field Hot Electron Energy Relaxation in InGaN/GaN Samples

MUTLU S., Ardalı Ş., Tıraş E., Balkan N.
Scientific final meeting of the COST-MP0805 action. (Novel gain materials and devices based on III-V-N compounds), İstanbul, Türkiye, 24 - 26 Ekim 2013, ss.14

15. Hot Electron Energy Relaxation in Al 0.83 In 0.17 N/AlN/GaN heterostructure

Ardalı Ş., MUTLU S., Tıraş E., Arslan E., Özbay E.
Scientific final meeting of the COST-MP0805 action, İstanbul, Türkiye, 24 - 26 Ekim 2013, ss.1, (Tam Metin Bildiri)
Metrikler

Yayın

29

Yayın (WoS)

14

Yayın (Scopus)

14

Atıf (WoS)

72

H-İndeks (WoS)

5

Atıf (Scopus)

74

H-İndeks (Scopus)

5

Atıf (Scholar)

34

H-İndeks (Scholar)

4

Atıf (Sobiad)

19

H-İndeks (Sobiad)

1

Toplam Atıf Sayısı

91

Proje

13

Fikri Mülkiyet

2

Açık Erişim

27
BM Sürdürülebilir Kalkınma Amaçları