Published journal articles indexed by SCI, SSCI, and AHCI
A study on the voltage-dependent response of a GaInNAs-based pin photodetector with a quasi-cavity
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
, vol.33, pp.1-6, 2018 (SCI-Expanded)
Articles Published in Other Journals
A quasi-cavity enhanced Light Emitting Diode
Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi
, vol.10, no.4, pp.1-6, 2020 (Peer-Reviewed Journal)


İstabul Üniversitesi Gözlemevi Odak Düzlemi Aygıtı Test ve Karakterizasyon Laboratuvarı
Turkish Journal of Astronomy and Astrophysics
, vol.1, no.2, pp.755-757, 2020 (Conference Book)
Refereed Congress / Symposium Publications in Proceedings
Investigation of the preventive effects of matrix-metalloproteinase inhibitors on dental erosion: In vitro study.
11th EAPD Interim Seminar and Guideline Workshop, Crete, Greece, 3 - 04 May 2019, vol.1, pp.1
ELECTRONIC TRANSPORT IN n-type MODULATION DOPED GaInAs/GaAs and GaInNAs/GaAs QUANTUM WELL STRUCTURES
Türk Fizik Derneği 34. Uluslararası Fizik Kongresi, Muğla, Turkey, 5 - 09 September 2018, pp.161
A Comparison Of Characteristics of Heterojunction pin Solar Cells Based On Dilute Bismide And Dilute Nitride Alloys
International Conference On Condensed Matter And Materials science, Adana, Turkey, 11 - 15 October 2017, pp.25
Characterization Of Heterojunction pin solar Cells Based On Dilute Bismide And Dilute Nitride
8th International Workshop on Bismuth-Containing Semiconductors, Marburg, Germany, 23 July 2017 - 26 July 2016, pp.97
Comparative Study of Multi Quantum Well Photodetector Characterization Based on GaInNAs for 1um Wavelength
UK Semiconductor, Sheffield, United Kingdom, 12 - 15 July 2017, pp.71
GaInNas(sb) Multi Quantum well Vertical Cavity Enhanced Photodetector
Semiconductor And Integrated Opto- Electronics Conference, Cardiff, United Kingdom, 18 - 20 April 2017, pp.103
Comparative Study of Multi Quantum Well GaInNAs Photodetector Characterisation
The Physics Of Optoelectronic Materials And Devices, Essex, United Kingdom, 27 - 28 March 2017, pp.10
Design Issues and Characterization of a GaInNAs-based Resonance Cavity Enhanced Photodetector
Nanophotonic and Micro/Nano Optic International Conference,, Paris, France, 7 - 09 December 2016, pp.133
INVESTIGATION OF ELECTRONIC TRANSPORT PROPERTIES IN GaInNAs/GaAs QUANTUM WELL STRUCTURES
Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 6 - 09 September 2016, vol.32, pp.129
Investigation of Electronic Transport Properties in GaInNAs/GaAs Quantum Well Structures
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Turkey, 6 - 09 September 2016, pp.125
Electronic transport properties of p-type GaInNAs/GaAs quantum well structures
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Turkey, 6 - 09 September 2016, pp.125
GaInNAs Based Resonance Cavity Enhanced Photodedector For Optical Communication Wavelength
Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Turkey, 6 - 09 September 2016, pp.106
Temperature and electric field dependence of localization in modulation doped GaInNAs/GaAs quantum well structures
9th International Physics Conference of the Balkan Physical Union-BPU9, İstanbul, Turkey, 24 - 27 August 2015, vol.9, pp.161
Dilute Nitride Resonant Cavity Enhanced Photodetector With Internal Gain For Operation At 1.286 um
Spie Optics And Optoelectronics, Prague, Czech Republic, 13 - 16 April 2015, pp.48
Magnetoresistance in n- and p-type Gainnas Gaas Modulation Doped Quantum Well Structures
Türk Fizik Derneği 31.Uluslararası Fizik Kongresi, Muğla, Bodrum., Muğla, Turkey, 21 - 25 July 2014, pp.137
Analytic Modeling Of Temperature Dependence of 2D Carrier Mobility In As Grown And Annealed GaInNAs/GaAs Quantum Well Structures
Türk Fizik Derneği 31. Uluslararası Fizik Kongresi,, Muğla, Turkey, 21 - 25 July 2014, pp.143
Optical Properties of GaAsBi Ternary Alloy
Novel Gain Materials And Devices Based On III-V-N/Bi Compounds,, İstanbul, Turkey, 24 - 26 September 2013, pp.41
Investigation of GaBiAs Alloy Using Raman spectroscopy
Novel Gain Materials And Devices Based On III-V-N/Bi Compounds, İstanbul, Turkey, 24 - 26 September 2013, pp.47
Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures
Novel Gain Materials And Devices Based On III-V-N/Bi Compounds, İstanbul, Turkey, 24 - 26 September 2013, pp.40
Effect of Alloy and Interface Roughness Scatterings On The Carrier Mobility in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Well Structures
17th European Molecular Beam Epitaxy Workshop, Levi, Finland, 10 - 13 March 2013, pp.246
Investigation Of Nitrogen Dependent In Plane Electron And Hole Effective Masses In GaInNAs/GaAs Quantum Well
17th European Molecular Beam Epitaxy Workshop, Levi, Finland, 10 - 13 March 2013, pp.300
An Analysis Of Scattering Mechanisms In As Grown And Annealed N And P Type Modulation Doped Gainnas Gaas Quantum Wells
Türk Fizik Derneği 29. Uluslararası Fizik Kongresi,, Muğla, Turkey, 5 - 08 September 2012, pp.139
An Analysis of Hall Mobility In As Grown And Annealed n- and p-type Modulation Doped GaInNAs/GaAs quantum Wells
International Conference On Superlattices, Nanostructures and Nanodevices, Dresden, Germany, 22 - 27 July 2012, pp.359
A Comprehensive Study Of Optical Characterization of n- and p-type As Grown And Annealed Modulation Doped Gaas Gainnas Qw Structures
International Conference On Superlattices, Nanostructures and Nanodevices, Dresden, Germany, 22 - 27 July 2012
A Comparative Study On Electronic Transport Properties of n- and p-type Modulation Doped Gainas Gaas And Dilute Nitride GaInNAs/GaAs Quantum Well
European Materials Research Society, Strazburg, France, 14 - 18 May 2012, pp.16
Effect of Thermal Annealing On Optical And Electronic Transport Properties in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Wells
European Materials Research Society,, Paris, France, 14 - 18 May 2012, pp.14
Electronic Transport Properties Of The GaInNAs/GaAs p-type As Grown And Annealed Modulation Doped Quantum Well Structures,
13th International Conference On Transparent Optical Networks, Sthocholm, Stocholm, Sweden, 26 July - 30 June 2011, pp.19