Yayınlar & Eserler

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Dilute nitride resonant-cavity light emitting diode

OPTICS AND LASER TECHNOLOGY, cilt.122, 2020 (SCI İndekslerine Giren Dergi) identifier identifier

A study on the voltage-dependent response of a GaInNAs-based pin photodetector with a quasi-cavity

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.33, no.114006, ss.1-6, 2018 (SSCI İndekslerine Giren Dergi)

Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.118, ss.823-829, 2015 (SCI İndekslerine Giren Dergi) identifier identifier

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Dilute Nitride-based Resonant Cavity Light Emitter for Optical Communication

42. PIERS PhotonIcs & Electromagnetics Research Symposium, Xiamen, Çin, 17 - 20 Aralık 2019, ss.200

Vertical Cavity based Optoelectronics devices for 1.3 um wavelength applications

Intertanional Eurasian Conference on Science, Engineering and Technology, Ankara, Türkiye, 22 - 23 Kasım 2019, ss.1

GaInNAs-based Resonant Cavity Light Emitter and Phototector for Optical Communication at 1.3 um

IV. Uluslararası Bilimsel ve Mesleki Çalışmalar Kongresi – Mühendislik, Ankara, Türkiye, 7 - 10 Kasım 2019, ss.1

GaInNAs-based vertical cavity devices for 1.3 µm applications

International Eurasion Conference on Science, Engineering Technology, Ankara, Türkiye, 22 - 23 Kasım 2018, ss.180

Characterization of GaInNAs-based IR Emitters

Türk Fizik Derneği 34. Uluslararası Fizik Kongresi, Muğla, Türkiye, 5 - 09 Eylül 2018, ss.267

ELECTRONIC TRANSPORT IN n-type MODULATION DOPED GaInAs/GaAs and GaInNAs/GaAs QUANTUM WELL STRUCTURES

Türk Fizik Derneği 34. Uluslararası Fizik Kongresi, Muğla, Türkiye, 5 - 09 Eylül 2018, ss.161

A Comparison Of Characteristics of Heterojunction pin Solar Cells Based On Dilute Bismide And Dilute Nitride Alloys

International Conference On Condensed Matter And Materials science, Adana, Türkiye, 11 - 15 Ekim 2017, ss.25

Characterization Of Heterojunction pin solar Cells Based On Dilute Bismide And Dilute Nitride

8th International Workshop on Bismuth-Containing Semiconductors, Marburg, Almanya, 23 Temmuz 2017 - 26 Temmuz 2016, ss.97

GaInNas(sb) Multi Quantum well Vertical Cavity Enhanced Photodetector

Semiconductor And Integrated Opto- Electronics Conference, Cardiff, İngiltere, 18 - 20 Nisan 2017, ss.103

Comparative Study of Multi Quantum Well GaInNAs Photodetector Characterisation

The Physics Of Optoelectronic Materials And Devices, Essex, İngiltere, 27 - 28 Mart 2017, ss.10

Design Issues and Characterization of a GaInNAs-based Resonance Cavity Enhanced Photodetector

Nanophotonic and Micro/Nano Optic International Conference,, Paris, Fransa, 7 - 09 Aralık 2016, ss.133

INVESTIGATION OF ELECTRONIC TRANSPORT PROPERTIES IN GaInNAs/GaAs QUANTUM WELL STRUCTURES

Turkish Physical Society 32nd International Physics Congress, Muğla, Türkiye, 6 - 09 Eylül 2016, cilt.32, ss.129

GaInNAs Based Resonance Cavity Enhanced Photodedector For Optical Communication Wavelength

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Türkiye, 6 - 09 Eylül 2016, ss.106

Electronic transport properties of p-type GaInNAs/GaAs quantum well structures

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Türkiye, 6 - 09 September 2016, ss.125

Investigation of Electronic Transport Properties in GaInNAs/GaAs Quantum Well Structures

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Türkiye, 6 - 09 Eylül 2016, ss.125

Temperature and electric field dependence of localization in modulation doped GaInNAs/GaAs quantum well structures

9th International Physics Conference of the Balkan Physical Union-BPU9, İstanbul, Türkiye, 24 - 27 Ağustos 2015, cilt.9, ss.161

Weak Localization and Weak Antilocalization in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Wells

İstanbul Üniversitesi Dünya Teknoloji, İnovasyon ve Girişimcilik Konferansı, İSTANBUL, TÜRKIYE, 28-30 Mayıs 2015, İstanbul, Türkiye, 28 - 30 May 2015, ss.80

Magnetoresistance in n- and p-type Gainnas Gaas Modulation Doped Quantum Well Structures

Türk Fizik Derneği 31.Uluslararası Fizik Kongresi, Muğla, Bodrum., Muğla, Türkiye, 21 - 25 July 2014, ss.137

Investigation of GaBiAs Alloy Using Raman spectroscopy

Novel Gain Materials And Devices Based On III-V-N/Bi Compounds, İstanbul, Türkiye, 24 - 26 Eylül 2013, ss.47

Optical Properties of GaAsBi Ternary Alloy

Novel Gain Materials And Devices Based On III-V-N/Bi Compounds,, İstanbul, Türkiye, 24 - 26 Eylül 2013, ss.41

An Analysis of Hall Mobility In As Grown And Annealed n- and p-type Modulation Doped GaInNAs/GaAs quantum Wells

International Conference On Superlattices, Nanostructures and Nanodevices, Dresden, Almanya, 22 - 27 Temmuz 2012, ss.359

Electronic Transport Properties Of The GaInNAs/GaAs p-type As Grown And Annealed Modulation Doped Quantum Well Structures,

13th International Conference On Transparent Optical Networks, Sthocholm, Stocholm, İsveç, 26 Temmuz - 30 Haziran 2011, ss.19